The noise of paralleled linear amplifiers is comprehensively treated, and practical methods of calculating noise parameters and predicting noise behavior of paralleled amplifiers are shown in comparison with their component single amplifier. Sometimes the paralleling technique can be used to improve the signal-to-noise ratio of the first-stage amplifier. It is shown that paralleling amplifiers does not always improve the signal-to-noise ratio. Conditions for improving the signal-to-noise ratio are shown. As an example, noise parameters, such as noise figure and optimum source impedance, of paralleled field effect transistors are calculated from the device parameters of their component field effect transistors. Calculated and measured values are compared with those of the single field effect transistor.
Author:
Matsudaira, T. Ken
Affiliation:
Sony Corporation, Technical Development Laboratory, Minatoku, Tokyo, Japan
JAES Volume 22 Issue 8 pp. 602-613; October 1974
Publication Date:
October 1, 1974
Click to purchase paper as a non-member or you can login as an AES member to see more options.
No AES members have commented on this paper yet.
To be notified of new comments on this paper you can subscribe to this RSS feed. Forum users should login to see additional options.
If you are not yet an AES member and have something important to say about this paper then we urge you to join the AES today and make your voice heard. You can join online today by clicking here.