(Subscribe to this discussion)
The results of studying the h parameters of stressed transistors of the 2N706 type are presented. For this transistor type, the stress characteristics can be predicted by knowing the initial parameter values. The optimum stress location on the transistor surface is detrmined for a practical transducer.
Author:
Longwell, Thomas F.
Affiliation:
Automatic Electric Laboratories, Inc., Northlake, IL
JAES Volume 15 Issue 1 pp. 60-62; January 1967
Publication Date:
January 1, 1967
Click to purchase paper as a non-member or you can login as an AES member to see more options.
Scott Dorsey |
Comment posted May 31, 2020 @ 13:42:21 UTC
(Comment permalink)
Engineers at Bell Labs working on planar silicon transistors discovered that flexing the transistor die changed the beta, and since Bell was always looking for new sources of inexpensive communications microphones for telephone use, a lot of research has been done trying to put this effect to use to create a "Transistor Microphone." There are several other papers in the AES library on this. (Respond to this comment)
|
To be notified of new comments on this paper you can subscribe to this RSS feed. Forum users should login to see additional options.
If you are not yet an AES member and have something important to say about this paper then we urge you to join the AES today and make your voice heard. You can join online today by clicking here.