Power MOS devices have become more available and capable in recent years. Although their major application is as a high-speed switch, it will be shown that they are excellent as class AB output devices in power linear amplifiers. They are more durable, linear, versatile, and provide far greater frequency response than bipolar power transistors commonly available. MOS devices are still relatively new and do not enjoy the low costs of bipolar devices, unfortunately. MOS devices are fundamentally different from bipolars in operation as well, and new circuits must be developed to take advantage of their characteristics. Hopefully time will permit their application to amplifiers of lesser cost.
Click to purchase paper as a non-member or you can login as an AES member to see more options.
No AES members have commented on this paper yet.
To be notified of new comments on this paper you can
subscribe to this RSS feed.
Forum users should login to see additional options.
If you are not yet an AES member and have something important to say about this paper then we urge you to join the AES today and make your voice heard. You can join online today by clicking here.
