The paper will discuss the basic physical design differences between the V-FET and the lateral FET. The intrinsic qualities of these devices, such as linearity and freedom from secondary breakdown, and the application of the V-FET to the design of audio amplifiers compared with bipolar devices, will be explained.
Authors:
Suwa, Hisashi; Ishitani, Akiyasu
Affiliation:
AKIYASU ISHITANI, SEMICONDUCTOR DIVISION, SONY CORPORATION, NEW YORK, NY
AES Convention:
51 (May 1975)
Paper Number:
1018
Publication Date:
May 1, 1975
Click to purchase paper as a non-member or you can login as an AES member to see more options.
No AES members have commented on this paper yet.
To be notified of new comments on this paper you can subscribe to this RSS feed. Forum users should login to see additional options.
If you are not yet an AES member and have something important to say about this paper then we urge you to join the AES today and make your voice heard. You can join online today by clicking here.