Where high-frequency clocked system switch-mode audio power amplifiers equipped with eGaN-FETs have been introduced in the past years, a novel self-oscillating eGaN-FET equipped amplifier is presented. A 150 Wrms amplifier has been built and tested with regard to performance and efficiency with an idle switching frequency of 2 MHz. The amplifier consists of a power-stage module with a self-oscillating loop and an error-reducing global loop. It was found that an eGaN-FET based amplifier shows promising potential for building high power density audio amplifiers with excellent audio performance. However care must be taken of the effects caused by a higher switching frequency.

Authors: Duraij, Martijn; Iversen, Niels Elkjær; Petersen, Lars Press; Boström, Patrik
Affiliations: Technical University of Denmark, Kgs. Lyngby, Denmark; Bolecano Holding AB, Helsingborg, Sweden(See document for exact affiliation information.)
AES Convention: 139 (October 2015) Paper Number: 9378
Publication Date: October 23, 2015
Subject: Transducers

Click to purchase paper as a non-member or you can login as an AES member to see more options.

No AES members have commented on this paper yet.

Subscribe to this discussion

To be notified of new comments on this paper you can subscribe to this RSS feed. Forum users should login to see additional options.

Start a discussion!

If you would like to start a discussion about this paper and are an AES member then you can login here:
Username:
Password:

If you are not yet an AES member and have something important to say about this paper then we urge you to join the AES today and make your voice heard. You can join online today by clicking here.