Where high-frequency clocked system switch-mode audio power amplifiers equipped with eGaN-FETs have been introduced in the past years, a novel self-oscillating eGaN-FET equipped amplifier is presented. A 150 Wrms amplifier has been built and tested with regard to performance and efficiency with an idle switching frequency of 2 MHz. The amplifier consists of a power-stage module with a self-oscillating loop and an error-reducing global loop. It was found that an eGaN-FET based amplifier shows promising potential for building high power density audio amplifiers with excellent audio performance. However care must be taken of the effects caused by a higher switching frequency.
Duraij, Martijn; Iversen, Niels Elkjær; Petersen, Lars Press; Boström, Patrik
Affiliations: Technical University of Denmark, Kgs. Lyngby, Denmark; Bolecano Holding AB, Helsingborg, Sweden(See document for exact affiliation information.)
AES Convention: 139 (October 2015) Paper Number: 9378
Publication Date: October 23, 2015
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