In This Section
Audibility of a CD-Standard A/DA/A Loop Inserted into High-Resolution Audio Playback - September 2007
Reflecting on Reflections - June 2014
Quiet Thoughts on a Deafening Problem - May 2014
AES Convention Papers Forum
The Audio Performance Comparison and Method of Designing Switching Amplifiers Using GaN FET
This paper addresses physical characteristics of FET materials, the method of designing switching amplifiers using GaN FET, and the audio performance comparison of silicon and GaN FET. The physical characteristics of GaN FET are excellent, but there is a technical limitation to apply to consumer electronics. Depletion mode GaN FET is used in the proposed system. Its characteristic is better than Enhance mode. But it has the characteristic of normally turn on. To solve this problem, a cascaded GaN switch block is used. It is a combination of depletion mode GaN and enhanced mode Si. The proposed method has more of an outstanding audio performance than the switching amplifier used in silicon.
No AES members have commented on this paper yet.
Subscribe to this discussion
Start a discussion!
If you are not yet an AES member and have something important to say about this paper then we urge you to join the AES today and make your voice heard. You can join online today by clicking here.