This paper addresses physical characteristics of FET materials, the method of designing switching amplifiers using GaN FET, and the audio performance comparison of silicon and GaN FET. The physical characteristics of GaN FET are excellent, but there is a technical limitation to apply to consumer electronics. Depletion mode GaN FET is used in the proposed system. Its characteristic is better than Enhance mode. But it has the characteristic of normally turn on. To solve this problem, a cascaded GaN switch block is used. It is a combination of depletion mode GaN and enhanced mode Si. The proposed method has more of an outstanding audio performance than the switching amplifier used in silicon.

Authors: Lee, Jaecheol; Kim, Haejong; Cho, Keeyeong; Park, Haekwang
Affiliations: Samsung Electronics Co., Ltd., Suwon, Korea; Samsung Electronics DMC R&D Center, Suwon, Korea(See document for exact affiliation information.)
AES Convention: 135 (October 2013) Paper Number: 9008
Publication Date: October 16, 2013
Subject: Applications in Audio

Click to purchase paper as a non-member or you can login as an AES member to see more options.

No AES members have commented on this paper yet.

Subscribe to this discussion

To be notified of new comments on this paper you can subscribe to this RSS feed. Forum users should login to see additional options.

Start a discussion!

If you would like to start a discussion about this paper and are an AES member then you can login here:
Username:
Password:

If you are not yet an AES member and have something important to say about this paper then we urge you to join the AES today and make your voice heard. You can join online today by clicking here.