This paper analyzes in which way silicon carbide transistors improve switching errors and loss associated with the power stage. A silicon carbide power stage and a conventional power stage with super-junction devices are compared in terms of switching behavior. Experimental results of switching transitions, delay times, and harmonic distortion as well as a theoretical evaluation are presented. Emending the imperfection of the power stage, silicon carbide transistors bring out high potential for Class D audio amplification.

Authors: Grifone Fuchs, Verena; Wegner, Carsten; Neuser, Sebastian; Ehrhardt, Dietmar
Affiliations: University of Siegen, Siegen, Germany; CAMCO GmbH, Wenden, Germany(See document for exact affiliation information.)
AES Convention: 133 (October 2012) Paper Number: 8686
Publication Date: October 25, 2012
Subject: Amplifiers and Equipment

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