This paper analyzes in which way silicon carbide transistors improve switching errors and loss associated with the power stage. A silicon carbide power stage and a conventional power stage with super-junction devices are compared in terms of switching behavior. Experimental results of switching transitions, delay times, and harmonic distortion as well as a theoretical evaluation are presented. Emending the imperfection of the power stage, silicon carbide transistors bring out high potential for Class D audio amplification.
Grifone Fuchs, Verena; Wegner, Carsten; Neuser, Sebastian; Ehrhardt, Dietmar
Affiliations: University of Siegen, Siegen, Germany; CAMCO GmbH, Wenden, Germany(See document for exact affiliation information.)
AES Convention: 133 (October 2012) Paper Number: 8686
Publication Date: October 25, 2012
Subject: Amplifiers and Equipment
No AES members have commented on this paper yet.
If you are not yet an AES member and have something important to say about this paper then we urge you to join the AES today and make your voice heard. You can join online today by clicking here.